Abstract
To improve the electrical properties of metal/insulator/metal capacitors for dynamic random access memory, the effects of the top electrode materials and their structures on the capacitor performance are examined. Three kinds of top electrode types (TiN, Ru, and TiN/Ru) are sputter‐deposited on ZrO2/Al2O3/ZrO2 (ZAZ) dielectric layers grown via atomic layer deposition (ALD) on TiN bottom electrodes. The TiN/Ru top electrode samples show the highest capacitance density among the three types of top electrodes, and the Ru and TiN/Ru top electrodes show less leakage current density than the TiN top electrode. The interface property is optimized when the Ru directly contacts the insulating layer due to its higher work function. The TiN layer on the 2 nm‐thick Ru top electrode decreases the adverse interfacial reaction layer (TiOxNy) of the dielectric/TiN bottom electrode through the scavenging oxygen atoms.
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