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Abstract
The variation in bandgap energy with composition was determined for single crystals of ZnxCd1-xSe at 300 and 90 K. Au-ZnxCd1-xSe (x<0.45) diodes were fabricated and used to determine the dependence of barrier height and uncompensated donor density on composition. Deep levels were also investigated in these diodes using photocapacitance, which revealed the presence of two dominant levels with activation energies of 0.55–0.6 and 1.14–1.16 eV (referred to the valence band edge) that were independent of the composition.
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