Abstract
We have grown ZnO thin films and nanopillars using pulsed laser deposition. Semi-insulating and n -conducting layers of various types can be fabricated. High-quality Pd Schottky contacts on the thin films have a high rectification ratio (∼10 4) and are analyzed in detail. The temperature-dependent I – V characteristics can be explained by assuming a lateral fluctuation σ = 134 ± 5 meV of the mean barrier height Φ B , m = 1.16 eV . The dominating shallow donor is found to be Al. A degenerately doped ZnO:Al back-contact allows depletion layer spectroscopy up to 10 MHz. In our thin films, deep donor levels at E C -100 meV (E1) and E C -300 meV (E3) are found. The optical modes in ZnO nanopillars with hexagonal cross-section and various widths are found to be whispering gallery modes (WGM). Experimental spectra from polarization-resolved microphotoluminescence and theoretical simulations agree very closely without adjustable parameters. The comparison of TE and TM modes allows us to determine the birefringence in single nanopillars.
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