Abstract
The electrical conductivity of ZnO doped (1−5 wt%) beta″-alumina ceramic samples has been measured by the complex admittance method. The smallest value of electrical resistivity was in the case of the samples doped with 3 wt% ZnO. The bulk conductivity dependence (in ln σT−1/ T coordinates) is characterized by two slopes, with a bend occuring at about 250°C. The low temperature activation energy of bulk conductivity is not influenced by the doping level. The high temperature activation energy decreases with increasing ZnO content. The change in the slope of the Arrhenius plot of the beta-alumina bulk conductivity is in agreement with what should be expected from Wang's model.
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