Abstract
Electrical properties of organic-inorganic p–n heterojunction structures with tetracene (Tc) and zinc oxide (ZnO) films were investigated. The ZnO films had different n-type carrier concentrations that varied from ∼1015 cm−3 to 1019 cm−3. Lower n-type ZnO layers resulted in decreased reverse currents in the ZnO:Al/ZnO/Tc/Au structures and in an improvement of their asymmetric properties. Experimentally determined energy level alignments at the ZnO/Tc interfaces were related to the electrical behavior of the structures. An improved rectification was associated with decreased generation-recombination currents at the ZnO/Tc interface due to an increased organic-inorganic interface energy gap. Current-voltage characteristics were analyzed by a differential approach. Electrical conduction mechanisms including bimolecular recombination as well as trap-filled limited conduction were identified in the investigated structures.
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