Electrical properties of yttrium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer

Abstract

This is the attempt to apply yttrium (Y) gate material to hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with a 10 nm Al2O3 dielectric layer. The maximum drain source current of Y/Al2O3/H-terminated diamond FET with a gate length of 8 μm is −53.9 mA/mm obtained at a gate voltage of −7 V and a drain source voltage of −20 V, and its current on–off ratio exceeds 109, which is large enough for practical applications. Based on the relationship between gate voltage and drain source current, the subthreshold swing is extracted to be 198 mV/dec. The electrical performance reveals that Y/Al2O3/H-terminated diamond FET would pave the way for the development of H-terminated diamond FET.