Electrical properties of undoped In 0.53Ga 0.47As grown on InP substrates by molecular beam epitaxy

Abstract

A series of 1-μm-thick undoped In 0.53Ga 0.47As with different substrate growth temperature ( T g) or different beam flux pressure (BFP) of As were grown on lattice-matched semi-insulating InP (0 0 1) substrates by molecular beam epitaxy (MBE). Van der Pauw Hall measurements were carried out for these In 0.53Ga 0.47As samples. The residual electron concentration decreased with increasing temperature from 77 to 140 K, but increased with increasing temperature from 140 to 300 K. Rapid thermal annealing (RTA) can reduce the residual electron concentration. The residual electron mobility increased with increasing temperature from 77 to 300 K. All these electrical properties are associated with As antisite defects.