Abstract
Air-sintered and atmospherically reduced BaTiO 3 ceramics were fluorinated by the introduction of a CF 3 CH 2 OH fluorination agent into a hot furnace using a supporting gas: either pure nitrogen or nitrogen containing a low concentration of oxygen. The nitrogen-supported fluorination resulted in a decrease in the resistivity of the insulating air-sintered samples to semiconducting values, primarily due to atmospheric reduction. When air-sintered samples were fluorinated using oxygen-containing nitrogen as the supporting gas, their resistivity remained very high. The exposure of fluorinated samples to air at high temperatures (1200°C) resulted in a decrease of their resistivity and a remarkable PTCR effect.
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