Abstract
Titanium dioxide (TiO 2) based gate insulators are being considered seriously for next generation metal oxide semiconductor field effect transistor applications due to its high permittivity. In this work, ultrathin TiO 2 films have been deposited at 150 °C on carbon implanted solid phase epitaxy grown strained Si 1− y C y layers by microwave plasma enhanced chemical vapor deposition using titanium tetrakis isopropoxide and oxygen. The deposited films have been analyzed by X-ray photoelectron spectroscopy for chemical composition. Using a metal–insulator–semiconductor capacitor structure, the interfacial and electrical properties of the deposited films have been characterized in the temperature range 25–125 °C. The leakage current has been found to be dominated by the Schottky emission at a low electric field, whereas Poole–Frenkel emission takes over at higher fields.
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