Electrical Properties of Ultra-Fast 3D-Trench Electrode Silicon Detector.

Manwen Liu,Zheng Li,Tao Zhou

doi:10.3390/mi11070674

Abstract

In our previous work on ultra-fast silicon detectors, extremely small carrier drift times of 50–100 picoseconds were predicted for electrode spacing of 5–10 μm. Expanding on these previous works, we systematically study the electrical characteristics of the ultra-fast, 3D-trench electrode silicon detector cell with p-type bulk silicon, such as electric potential distribution, electric field distribution, hole concentration distribution, and leakage current to analyze the full detector depletion voltage and other detector properties. To verify the prediction of ultra-fast response times, we simulate the instant induced current curves before and after irradiation with different minimum ionizing particle (MIP) hitting positions. High position resolution pixel detectors can be fabricated by constructing an array of these extremely small detector cells.

Highlights

The applications of high energy and/or position resolution silicon detectors are very broad, including medical imaging [1,2], aerospace work [3,4,5], high energy physics experiments [6,7,8], and nuclear safety guards, as well as in many fields with scientific applications such as photonics and astrophysics [9,10,11]
To pursue high radiation hardness and ultra-fast response time, as well as high energy and position resolution, we propose an ultra-fast silicon detector based on the 3D-trench electrode detector [25,26]
In our previous study on ultra-fast 3D-trench electrode detectors, we investigated the cross-section of electric potential and field distribution to estimate the minimum bias voltage to make carrier drift velocity reach saturation velocity, established the structure overcome the central low electric field region of a 3D-column electrode detector, and studied the breakdown situation

Summary

Introduction

The applications of high energy and/or position resolution silicon detectors are very broad, including medical imaging [1,2], aerospace work [3,4,5], high energy physics experiments [6,7,8], and nuclear safety guards, as well as in many fields with scientific applications such as photonics and astrophysics [9,10,11]. Silicon detectors (including stripe detectors, pixel detectors, silicon drift detectors, and 3D electrode detectors) have many advantages, such as high energy resolution, quick response time, and ease of very large scale integration (VLSI), etc. To pursue high radiation hardness and ultra-fast response time, as well as high energy and position resolution, we propose an ultra-fast silicon detector based on the 3D-trench electrode detector [25,26]

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Results

Conclusion