Abstract
A dual-layer silicon oxide consisting of reoxidized low-pressure thermal oxide and chemically vapour deposited high temperature oxide at a low pressure prepared by an intra-chamber process is introduced. In this paper, electrical properties of these stacked oxide films are studied. They exhibit higher breakdown field strengths, better charge-to-breakdown characteristics as well as lower defect densities than conventional thermal oxides. Furthermore they reveal low interface state densities and good interface stability under constant current stress. Applying the Fowler-Nordheim tunnelling experiments, the barrier heights between the silicon substrate and the low-pressure oxide and between the metallization and the high-temperature oxide was determined to be 2.8±0.1 eV and 2.6±0.1 eV respectively.
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