Abstract
We have studied the electrical properties of thin ferroelectric films of barium strontium titanate (BaxSr1−xTiO3) obtained on fused quartz (SiO2) substrates by RF magnetron sputtering. Dependences of the tuning coefficient and dielectric loss tangent on the synthesis temperature and the film thickness are reported. The results are compared to analogous data for films grown on polycrystalline alumina substrates.
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