Abstract
Thermal degradation of TiSi2/TiW/AlSi layered structures is studied by the resistivity measurements on samples annealed in the temperature range of 400–550 °C. The effect of using pure TiW and stuffed TiW(N) as a diffusion barrier on the reaction kinetics of the layered structure is studied. The change in the resistivity is correlated to the rate of formation of intermetallic compound. It is shown that the reaction rate of the compound formation is reduced by about 25% for TiW(N) barrier layer compared to pure TiW annealed at 500 °C.
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