Abstract
The electrical properties of a Ta layer prepared with and without RuO 2 addition were investigated. The Ta + RuO 2 / TiSi 2 /poly-Si/SiO 2 /Si contact system exhibited lower total resistance and ohmic characteristics up to 800°C. Meanwhile, the Ta/TiSi 2 /poly-Si/SiO 2 /Si contact system showed higher total resistance and nonohmic behavior after annealing at 650°C, attributed to the oxidation of both Ta and TiSi 2 layers. In the former case, a Ta + RuO 2 diffusion barrier showed an amorphous Ta microstructure and embedded RuO x nanocrystals in the as-deposited state. The conductive RuO 2 crystalline phase in the Ta + RuO 2 film was formed by reaction between the nanocrystalline RuO x and oxygen indiffused from air during annealing. When the Ta layer was deposited with RuO 2 addition, therefore, both the electrical properties and the oxidation resistance of the Ta + RuO 2 diffusion barrier were better than those of TiN, TaN, and Ta-Si-N barriers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
