Abstract
We investigated the electrical properties of the Cu(In,Ga)Se 2/MoSe 2/Mo structure. CIGS/Mo heterocontact including the MoSe 2 layer is not Schottky-type but a favorable ohmic-type contact by the evaluation of dark I– V measurement at low temperature. A characteristic peak at 870 nm is observed in differential quantum efficiency of a solar cell with a CIGS thickness of 0.5 μm. This peak is considered with relating to the absorption of the MoSe 2 layer. The band gap of MoSe 2 is calculated to be 1.41 eV from the absorption peak. The band diagram is discussed on the basis of the electrical point of view.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
