Abstract
We investigate the background doping level, mobility and conductivity of the absorber layer using the type-II InAs/GaSb structure grown by molecular beam epitaxy for the mid, long and very long wavelength (MW, LW and VLW) bands between 77 K and room temperature. It is found that the conduction of the absorber layer changes from p- to n-type when increasing temperature. The transition temperature occurs at 210, 140 and 85 K and the electron activation energy is 106, 71 and 32 meV for the MW, LW and VLW samples, respectively. The conduction change with respect to temperature is attributed to different activation energy between the residual electrons in the InAs layer and the residual holes in the GaSb layer. The detailed trend of the electrical properties is also discussed.
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