Abstract
TiO2-based varistor ceramics doped with 0.25–1.00mol% Ta2O5 were prepared by the conventional solid state reaction technique at 1300°C and the effects of Ta2O5 substitution on their electrical properties have been studied. The results showed that the Ta2O5 dopant played an important role in the formation of the grain boundary barriers. Good electrical properties with E1mA=14.9V/mm, α=4.48, εr=9.68×104, tanδ=0.36 were obtained for 0.50mol% Ta2O5 addition. These results indicate the 99.5mol% TiO2+0.50mol% Ta2O5+2wt% (0.723mol% Bi2O3+1mol% B2O3) composition might be a suitable candidate for capacitor–varistor functional device.
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