Abstract
A set of the different Si:Al and Si:B surface phases capped by amorphous Si layers were grown by molecular beam epitaxy (MBE). The formation of the buried interfaces was studied by low-energy electron diffraction and Auger electron spectroscopy. The conductivity and Hall effect measurements of the grown samples revealed that only the buried Si(111)√3×√3−B surface phase manifests itself as a highly doped degenerated layer, while all the buried Si:Al surface phases covered by amorphous Si show negligible activation of dopants. The difference in electrical properties of the buried surface phases are discussed in terms of the characteristics of their atomic structure.
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