Abstract
We have studied the effect of channel formation in an Ni/n-Si/V2O5−B2O3−CaO surface barrier structure on the capacitance-voltage characteristics, the dependence of the small-signal photovoltage on the state of the surface and the modulation frequency of the test signal, and the planar distribution of the photovoltage and the noise properties for the high-resistance and low-resistance states of the formed channel. It has been established that forming of the dielectric causes the appearance of regions of thermal-field recombination of the charge carriers, burst noise, strengthened heterogeneity of the photoelectric properties, and the appearance of two peaks in the density of surface states from silicon divacancies at the interphase boundary. It is proposed that an important role in the creation of the properties of the electrically formed structures is played by shock waves which propagate from the forming channel, the additional lattice defects formed during dissipation, and the phase state of the crystallites in the channel.
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