Abstract
Diode structures obtained by vacuum sputtering deposition of Al onto the surface of p-Cd1−xZnxTe (x=0.05) single crystals were studied. In the context of the Sah-Noyce-Shockley model for generation and recombination of charge carriers, a quantitative description of the diodes’ electrical characteristics is attained.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have