Abstract
Electrical properties of phosphorus doped amorphous Si (a-Si) prepared by chemical vapor deposition (CVD) have been investigated. The gaseous impurity ratio R = NpPH3/ NSiH4, was varied from 2×10-6 to 1.1×10-2. When the ratio R exceeds RC =4.2 ×10-4, the room temperature conductivity is dominated by the conduction in the extended states and rapidly increases with R up to 10-1 (Ω-cm)-1 at the ratio R = 1.1×10-1. It is found that phosphorus doping below RC results in the compensation of native defects or dangling bonds and that an efficient shift of the Fermi level as well as a narrowing of the tailing width of the extended states take place by doping above RC. The magnetoresistance is explained as a modification of the spin-flip relaxation time of localized electrons by external magnetic field.
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