Abstract
In a previous paper we have shown that it was possible to obtain low-resistivity (1.5 Ω ⋅ cm) and stoichiometric MnO 2 films by reactive cathodic sputtering of an Mn 3O 4 target. Thermogravimetric analysis, SIMS, and XRD techniques have been used to relate chemical and physical characteristics of the deposits to their electrical properties. The resistivity of semiconducting manganese dioxide films is lowered (down to 0.3 Ω ⋅ cm) by air annealing up to 450°C. This treatment also produces the thermal splitting off of oxygen from the sample. The initial presence of contaminating sodium clusters inside the films must have an influence on the electrical behaviour of air-reduced films.
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