Electrical properties of solid-phase crystallized polycrystalline silicon films

Abstract

Analyses of free-carrier optical absorption and Hall-effect current measurements indicated in high carrier mobilities of 32 cm2/Vs and 30 cm2/Vs, respectively, and low carrier densities of 5.0×1019 cm-3 and 3.8×1019 cm-3, respectively, for 1.1×1020 cm-3-phosphorus-doped solid-phase crystallized polycrystalline silicon films fabricated at 600 °C for 48 h. The silicon films had good crystalline properties of the crystalline grains and a low crystalline volume fraction of 0.43. A XeCl excimer laser anneal at 500 mJ/cm2 effectively increased the carrier density to 1.1×1020 cm-3, and also increased the crystalline volume fraction to 0.93. Moreover, H2O-vapor heat treatment at 1.3×106 Pa for 3 h at 260 °C reduced the density of the defect states from 6.2×1018 cm-3 to 2.6×1018 cm-3.