Abstract
Epitaxial films of SnTe were grown on heated mica substrates (448 K) and their galvanomagnetic properties were studied between 160 and 300 K. The carrier concentration and the mobility for different thicknesses of the films are explained by means of a two valence band model. The mobility values calculated for heavy holes agree well with the experimental values whereas the calculated mobility values of light holes show a peculiar behaviour which cannot be explained if the band is assumed to be parabolic.
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