Abstract
Sn-doped In2O3 films (ITO) have been prepared by coevaporation of In and Sn on to heated glass substrates at 10-3 Torr O2 and the electrical properties have been investigated. Tin-doping suppresses the oxidation of In under evaporation, and higher substrate temperatures, above 400 degrees C, are necessary to obtain a visible transparent film (80% at 550 nm) than in the case of undoped In2O3 films. By tin-doping, an ITO film with the lowest resistivity rho =6*10-4 Omega cm has been obtained at tin-doping of Sn/In approximately=0.05 atomic ratio, where the carrier concentration is 7*1020 cm-3 and the mobility is 15 cm2 V-1 s-1. All the films show n-type conductivity with complete degeneracy.
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