Abstract
Electrical properties of silicon diodes with p +n junctions irradiated with 197Au +26 swift heavy ions (energy E = 350 MeV, fluences of 10 7 cm −2 and 10 8 cm −2) and silicon diodes irradiated with electrons (energy E = 3.5 MeV, fluences of 10 15 cm −2, 5 × 10 15 cm −2 and 10 16 cm −2) have been investigated. Frequency dependences of the impedance, current–voltage characteristics and switching characteristics of these devices have been studied. Irradiation of the diodes with 197Au +26 ions at a fluence of 10 8 cm −2 leads to the formation of a quasi-continuous layer of irradiation-induced defects that enable a combination of characteristics such as a reverse resistance recovery time and direct voltage drop that are better than those for electron-irradiated diodes. Still, the irradiation of high-energy ions results in an increase in recombination currents that are larger than those obtained with electron irradiation, and causes more complicated frequency dispersion of the diode parameters.
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