Abstract
AbstractElectrical properties in the temperature range between 80 K and 300 K of type‐II short period InAs/GaSb superlattice (SL) photodiode are reported. Resistivity and Hall measurements have been carried out on a 300 periods unintentionally doped SL grown on semi‐insulating GaAs substrate while capacitance‐voltage and current‐voltage measurements have been performed on the same SL structure elaborated on n‐type GaSb substrate. Whatever the electrical investigations, the behaviour of the InAs/GaSb SL versus temperature exhibited a reproducible change in type of conductivity. The SL is n‐type at high temperatures range with n(300 K) = 6 × 1016 cm–3 whereas it is p‐type at low temperatures with p(100 K) = 2 × 1016 cm–3. This versatile change in type of conductivity is attributed to the presence of inserted InSb layer at the InAs‐GaSb interface. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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