Abstract
Electrical properties of adherent, low stressed aluminum nitride films prepared by magnetron sputtering have been studied. Arrhenius plots in the 100/spl deg/-170/spl deg/C range of temperature and transient current curves with different bias steps (at room temperature and 150/spl deg/C) have been performed. The conduction activation energy has been found and its dependence on subsequent annealings has been studied. A phenomenological conduction model at the ITO-AlN interface based on the shape of the transient curves has been elaborated. The conditions of behaviour of AlN as a highly insulating layer (sputtering conditions, thicknesses, annealing temperatures) have been established.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.