Electrical properties of PZT thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

Abstract

Ferroelectric Pb(Zr,Ti)O3 thin films were successfully fabricated on Pt-coated Si substrates by the electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) method using metal-organic (MO) sources. Perovskite structures with well-developed crystalline grains are obtained at a substrate temperature of 500 °C. These PZT films, with thicknesses of about 1000Å, show high charge storage densities (Pmax − Pr = 10–15 μC cm−2 for 1.5 V operation) and low leakage current densities (≈ 10−6 A cm−2 at 1.5 V). The effects of the Zr/Ti concentration ratio in the film and the rapid thermal annealing on the electrical properties of the films were also studied.