Abstract
Yttrium oxide (Y 2 0 3 ) has been successfully deposited on n-type 4H-SiC substrates using pulsed laser deposition. The effects of postdeposition annealing temperature (400, 500, and 600°C) on the electrical properties of the Y 2 O 3 gate oxide have been studied in comparison with the as-deposited sample. The sample annealed at 600°C possessed the highest dielectric breakdown field of ∼6.5 MV cm -1 at 10- 6 A cm -2 , resulting from the lowest interface trap density and total interface trap density. The Fowler-Nordheim tunneling mechanism has been investigated on all samples and the highest value of barrier height extracted between the semiconductor and oxide conduction band edges was 2.67 eV.
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