Abstract
Thin films (50 nm, 100 nm and 300 nm) of multifunctional BaBiO3-δ (BBO) are grown in Au/BBO/Pt architecture using pulsed laser deposition (PLD) technique. Temperature dependent resistivity and dielectric measurements show a first order transformation with a thermal hysteresis of ∼40 K (between ∼150 K and ∼190 K) in Au/BBO300/Pt device. Non-volatile resistive switching (RS) with a resistance window of ∼8.5X is observed in Au/BBO300/Pt device at room temperature. The hysteretic J-V behavior exists in I2/m phase only. The application of a magnetic field (∼0.5 T) doubles the J-V hysteresis area. Thus, we demonstrate that the Au/BBO300/Pt is a non-volatile RS device and J-V hysteresis area of this device can be appreciably improved by applied magnetic field.
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