Abstract
The carrier concentration and mobility of intrinsic holes in poly-Ge films grown by solid-phase crystallization (SPC) were investigated. The two-step SPC method, consisting of low-temperature annealing (425 °C) to obtain large grains and subsequent high-temperature annealing (500 °C) to decrease defects, is proposed. The hole concentration remarkably decreased from 1 × 10 18 to 5 × 10 17cm −3 with keeping a high-mobility (140 cm 2/Vs) after post-annealing.
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