Abstract
The characteristics of photoelectrochemically (PEC) generated gallium oxide films on n-GaN using an 0.002 M KOH electrolyte are described. The chemical composition of the resistive layers was analyzed by Auger electron spectroscopy. The DC and HF characteristics of Al/Ti/PEC-Ga 2O 3 (gallium sesquioxide)/GaN structures were studied with current–voltage and capacitance–voltage measurements, respectively. Under reverse bias we found extremely low leakage currents (<10 −8 Acm −2 at −15 V) and a very low interface state density; high-temperature operation (up to 166°C tested) motivates the integration of the described dielectric layer forming technique into GaN based device process schemes. Our method may also be employed as gate recess technology.
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