Abstract
Oxide thin-films with perovskite structure are prepared by rf magnetron sputtering in argon-oxygen mixed gas at substrate temperature below 500°C using the Sr(Zr, Ti)O3 and Ba(Sn, Ti)O3 solid solution ceramic targets. The dielectric properties and the microstructure of the sputtered thin-films depend on the substrate temperature, oxygen partial pressure, and target compositions. The dielectric constant and the electrical breakdown strength of the thin-films sputtered by using Sr(Zr0.2Ti0.8)O3 and Ba(Sn0.2Ti0.8)O3 targets is about 100 and 3 MV/cm, respectively. These thin-films with the high dielectric constant and the high electrical breakdown strength are useful for the dielectic layer of the ac TFEL panel.
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