Abstract
The authors discuss the electrical properties of silicon oxide films deposited at room temperature by PECVD, using disilane as the silicon source. In experiments, the interface trap density of the films with post-metallisation anneal showed a minimum value of 6.33 × 1011 cm-2eV-1, which is 36.6% lower than that of the as- deposited films. The authors also show that the films annealed in hydrogen-containing ambient reduced the early breakdown failures, resulting in an overall improvement of film integrity.
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