Abstract
The electrical resistivity and Hall coefficient of the high-temperature ferromagnetic semiconductor p-Zn1 − xCdxGeAs2〈Mn〉 have been measured as a function of pressure near room temperature. The features in the curves obtained attest to a structural phase transition at particular pressures. With increasing manganese content, the phase transition shifts to lower pressure. The features observed in the pressure-dependent Hall coefficient of the crystals containing more than 0.06 wt % manganese, in which ferromagnetic behavior is more pronounced, are probably due to the anomalous component of the Hall effect and its modulation in the presence of narrow impurity bands.
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