Abstract
AbstractRelations for the effective drift mobility, the Hall coefficient, and the Hall mobility in p‐type group IV and III–V compounds are derived accounting for the degenerate valence band structure and acting scattering mechanisms. Improved deformation potentials are determined for holes in p‐type GaAs. Zn‐doped and Ge‐doped p‐type GaAs samples with hole concentrations in the range from 4 · 1017 to about 1020 cm−3 were analysed with regard to the temperature dependence of the Hall mobility, and it was found that the Brooks‐Herring formula is inadequate to describe ionized impurity scattering in p‐type GaAs.
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