Abstract
The ( p) tellurium-( p) silicon heterojunction has been prepared by vacuum evaporation of tellurium (Te) films on silicon (Si) substrates. The influence of the thickness (1000–13000 Å) and annealing on the electrical properties of the films and heterojunction properties have been investigated. The films prepared on heated substrates (∼425 K) show the properties of the annealed films and good adherance on Si substrates. The current-voltage (I-V) characteristics of the ( p)Te-( p)Si heterojunction have been studied in the temperature range 77 to about 360 K. The I-V characteristics show a double saturation indicating the applicability of double Schottky diode model for isotype heterojunctions when large density of interface states (∼1014) are present. The film thickness and resistivity of the Si (0.4–11 Ω cm) show little influence on the I-V characteristics or builtin potential estimated from the temperature dependence of I-V characteristics. In spite of large difference in band gap of Si and Te the estimated builtin potential on Si (VD1) is only slightly higher than on Te (VD2) side. This suggests that the heterojunction properties are mainly controlled by the interface states. The large interface states in Te-Si heterojunction make the double Schottky diode model valid even when the carrier concentration of Te is more than three orders of magnitude higher than that of Si.
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