Abstract
Rhodamine-101 (Rh101) thin films on n,-type Si substrates have been formed by means of evaporation, thus Sn/R,h101/n-Si heterojunctions have been fabricated. The Sn/Rh101/n.-Si devices are rectifying. The optical energy gaps have been determined from the absorption spectra in the wavelength range of 400 nm to 700 nm. Rh101 has been characterized by direct optical absorption with an optical edge at 2.05 ± 0.05 eV and by indirect optical absorption with an optical edge at 1.80 ± 0.05 eV. It was demonstrated that trap-charge-limited current is the dominant transport mechanism at large forward bias. A mobility value of μ = 7.31 x 10 -6 cm 2 V -1 s -1 for Rh101 has been obtained from the forward-bias current-voltage characteristics.
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