Abstract
This paper reports the results of the electrical conductivity measurements for Nb-doped BaTiO 3 ceramics in the temperature range 1073–1373 K in both oxidizing and reducive atmospheres. The electrical conductivity was also applied to monitor the formation of Nb-doped BaTiO 3. It is shown that the solid state reaction for the system BaTiO 3–Nb 2O 3 takes place at 1573 K, but annealing at 1623 K is required to produce specimen of reproducible electrical properties. The solubility limit of Nb in stoichiometric BaTiO 3 (Ba/Ti=1) at 1573 K in air is 5 at%. The p(O 2) exponent of the electrical conductivity was determined (1/ n σ =−1/3.9). This exponent is consistent with the defect disorder model of Nb-doped BaTiO 3 derived assuming that ionic charge compensation prevails. The activation energy of the electrical conductivity for Nb-doped BaTiO 3 depends on both p(O 2) and Nb content.
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