Abstract
The temperature dependence of the electrical transport properties of very homogeneous p-Hg1−xCdxTe with 0.20 <x<0.36 is reported. Samples with suitable surface and contact preparation show no anomalous behaviour at the lowest temperature. The mobility is characteristic of compensated material. Its exhibits a maximum at 40–50 K having a magnitude between 1000 and 300 cm2V−1s−1, which is a function of hole concentration.
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