Abstract
AbstractThe properties of Hfx Ti1–x O2 solid solution thin films on silicon have been investigated. The HfTiO4 thin films were grown on single crystal (100)‐oriented silicon substrates by low‐pressure hot‐target reactive magnetron sputtering from Ti:Hf (46.7:53.3) mosaic target. Electrical measurements of prepared structures allowed the analysis of the electronic phenomena occurring at the oxide‐semiconductor interface. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Schedule a callMore From: Physica Status Solidi A-applications and Materials Science
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