Abstract
Growth of ultrathin (<100 /spl Aring/) oxynitride on strained-Si using microwave N/sub 2/O and NH/sub 3/ plasma is reported. X-ray photoelectron spectroscopy (XPS) results indicate a nitrogen-rich layer at the strained-Si/SiO/sub 2/ interface. The electrical properties of oxynitrides have been characterized using a metal-insulator-semiconductor (MIS) structure. A moderately low value of insulator charge density (6.1/spl times/10/sup 10/ cm/sup -2/) has been obtained for NH/sub 3/ plasma treated N/sub 2/O oxide sample. Nitrided oxide shows a larger breakdown voltage and an improved charge trapping properties under Fowler-Nordheim (F-N) constant current stress.
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