Abstract
We report the electrical properties of p++-Si-Al2O3-MoSe2 metal-oxide-semiconductor capacitors using capacitance-voltage measurement. The capacitance-voltage characteristics with distinct accumulation, depletion, and inversion regions revealed n-type doping in MoSe2. The estimated doping concentration and interface trap density were ∼1018 cm−3 and ∼1012 eV−1 cm−2, respectively. The accumulation capacitance showed relatively low frequency dispersion suggesting lower border trap density in Al2O3-MoSe2 devices than that in Al2O3-MoS2 devices. These results suggest that it is possible to obtain high-quality Al2O3-MoSe2 interface, highlighting the versatility of capacitance-voltage measurements on the device integration of MoSe2 and other two-dimensional semiconductors.
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