Abstract
AbstractOrganic semiconductor devices using electrochemically prepared poly(N‐methylpyrrole) (PNP) were characterized by capacitance‐voltage (C‐V) measurements. A device with aluminum evaporated on the PNP behaved as a MOS (metal‐oxide semiconductor) diode in vacuum. Assuming the oxide layer between the metal and the PNP to be pure Al2O3, the MOS parameters were calculated. The values obtained for depletion width W = 166 Å and acceptor density NA = 1018 cm−3 in the PNP were reasonable by comparison with the previously reported values obtained by Schottky analysis. An indium/poly(p‐phenylene)‐1,3,4‐oxadiazole (POD)/PNP diode was prepared, and C‐V measurements were carried out in air. The diode behaved like an MIS (metal‐insulator semiconductor) device, but the characteristics showed large variation with frequency. We have proposed a schematic model for this mechanism on the basis of the results obtained by dielectric measurements of POD and the temperature dependence of the MIS characteristics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Polymer Science Part B: Polymer Physics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
