Abstract
Mg-doped GaAs and AlxGa1-xAs (x <EQ 0.36) layers were grown by liquid phase epitaxy. Temperature dependent Hall (TDH) effect measurements were performed on the epitaxial layers between 300 K and 77 K. Near band gap photoluminescence (PL) spectra were recorded at liquid helium (approximately 5 K) temperature. The optical ionization energy of Mg acceptor centers as deduced from the PL data increases with x, being equal to 31 +/- 2 meV for x equals 0.1 and to 40 +/- 5 meV for x equals 0.35. However, the thermal activation energy of the same centers, as deduced from the analysis of the TDH measurements, is much smaller than the optical one. This difference can be explained by invoking the usual models for the dependence of the thermal activation energy of impurity centers on their concentration.© (1992) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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