Abstract
We successfully deposited hexagonal wurtzite MgxZn1−xO (0 ≤ x ≤ 0.18) films on Si substrates by using RF magnetron co-sputtering with ZnO and Mg0.3Zn0.7O targets. The Mg content was varied by controlling the RF power of the Mg0.3Zn0.7O target while the RF power of the ZnO target was fixed at 100 W. The electrical properties of the MgxZn1−xO films were investigated by using a transmission line model (TLM) with Ti/Au electrode and Hall effect measurements. The X-ray diffraction (XRD) results demonstrate that some Zn atoms can be replaced by Mg atoms in the MgxZn1−xO films. As the Mg content was increased from 0 at.% to 18 at.%, the resistivity of MgxZn1−xO films increased and the carrier concentration decreased from 1.17 × 1019 cm−3 to 1.17 × 1017 cm−3, which indicates a decrease in the number of oxygen vacancies. Meanwhile, the Hall mobility increased to 15.3 cm2/Vs. The electrical properties of MgxZn1−xO films were tuned by using the Mg content.
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