Abstract
A PVDF (polyvinylidene fluoride) thin film having a phase was prepared by using sol-gel method. The film’s properties were studied to evaluate the possibility of use in a ferroelectric random access memory. In order to characterize its electrical properties, we produced a MFS (metal-ferroelectric-semiconductor) structure by evaporation of Au electrodes. The C-V (capacitance-voltage) measurements revealed that the Au/PVDF/Si structure with a 7 wt% film had a memory window width of about 1.8 V for a bias voltage sweep of 4 V.
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