Abstract
In this study, we fabricated the n-channel metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS-FETs) using an Au/polyvinylidene fluoride-trifluoroethylene P(VDF-TrFE)/ZrO2/Si(100) structures. The ZrO2 thin film had the equivalent oxide thickness (EOT) value of around 9 nm. And the P(VDF-TrFE) film on a ZrO2/Si structure showed good ferroelectric property with memory window width of 2.5 V for a bias voltage sweeping of ±7 V. The leakage current density of this MFIS structure showed very excellent insulation property with about 9 × 10−8 A/cm2 at 5 V. Based on these results, we fabricated and investigated MFIS-FETs with ferroelectric polymer P(VDF-TrFE) film and ZrO2 buffer layer. The memory window width and on/off ratio of the MFIS-FET was about 4.5 V and 103, respectively. These results predicted that the P(VDF-TrFE) thin film would be useful for the realization of 1-transistor type ferroelectric memory.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
