Abstract
We have studied the electrical properties of aluminum-dysprosium oxide-gadolinium oxide-silicon (Al-Dy2O3-Gd2O3-Si) structures. The conductivity of these metal-insulator-semiconductor (MIS) structures is satisfactorily described by the Poole-Frenkel mechanism. The density of surface states determined by the method of capacitance-voltage characteristics is 5.6×1011 cm−2. The surface generation rate and lifetime of the minority charge carriers determined using the Zerbst method fall within 47–67 cm/s and 0.3–0.6 μs, respectively. The structures studied are promising materials for MIS varactors with a high capacity variation coefficient.
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